ترجمه مقاله Role of Doping in Carbon Nanotube Transistors With Source/Drain Underlaps
Abstract - The effects of doping on the performance of coaxially gated carbon nanotube (CNT) field-effect transistors for both zero Schottky-barrier (SB) and doped carbon nanotube contacts are theoretically investigated. For ultrascaled CNTFETs in which the source/drain metal contacts lie 50 nm apart, there is no MOSFET-like contact CNTFET (C-CNTFET) with an acceptable on/off current ratio using a CNT of diameter gt;= 1.5 nm and a source/drain voltage gt;= 0.4 V. For CNTFETs with ...
